منابع مشابه
Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
B. Wittmann, S.N. Danilov, V.V. Bel’kov, S.A. Tarasenko, E.G. Novik, H. Buhmann, C. Brüne, L.W. Molenkamp, Z.D. Kvon, N.N. Mikhailov, S.A. Dvoretsky, N.Q.Vinh, A.F.G. van der Meer, B. Murdin, and S.D. Ganichev Terahertz Center, University of Regensburg, 93040 Regensburg, Germany A.F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 194021 St. Petersburg, Russia 3 Physical ...
متن کاملHelical quantum states in HgTe quantum dots with inverted band structures.
We investigate theoretically the electron states in HgTe quantum dots (QDs) with inverted band structures. In sharp contrast to conventional semiconductor quantum dots, the quantum states in the gap of the HgTe QD are fully spin-polarized and show ringlike density distributions near the boundary of the QD and spin-angular momentum locking. The persistent charge currents and magnetic moments, i....
متن کاملQuantum spin hall insulator state in HgTe quantum wells.
Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insul...
متن کاملMagnetic properties of HgTe quantum wells
Using analytical formulas as well as a finite-difference scheme, we investigate themagnetic field dependence of the energy spectra and magnetic edge states of HgTe/CdTe-based quantum wells in the presence of perpendicular magnetic fields and hard walls for the band-structure parameters corresponding to the normal and inverted regimes. Whereas one can not find counterpropagating, spin-polarized ...
متن کاملTHz Photoresponse and Magnetotransport of detectors made of HgCdTe/HgTe quantum well structures
In addition to spaceand time-resolved measurements of the electrical generation of excited electrons in quantum Hall (QH) devices the dissipation in these devices induced by Terahertz (THz) laser impulses is investigated. For these tasks a THz laser system ( p-Ge-Laser [1]) is applied. This laser uses transitions between Landau levels of light holes and emits laser impulses with an adjustable d...
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ژورنال
عنوان ژورنال: physica status solidi (b)
سال: 2014
ISSN: 0370-1972
DOI: 10.1002/pssb.201350309